ls4150 document number 85562 rev. 1.8, 20-aug-10 vishay semiconductors www.vishay.com 1 9612009 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal fast switching diode features ? silicon epitaxial planar diode ? low forward voltage drop ? high forward current capability ? quadromelf package ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? high speed switch and general purpose ? use in computer and industrial applications mechanical data case: quadromelf sod-80 weight: approx. 34 mg cathode band color: black packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 10 k/box gs08/2.5 k per 7" reel (8 mm tape), 12.5 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified part ordering code type marking remarks ls4150 ls4150-gs18 or ls4150-gs08 - tape and reel parameter test condition symbol value unit repetitive peak reverse voltage v rrm 50 v reverse voltage v r 50 v peak forward surge current t p = 1 s i fsm 4a forward continuous current i f 600 ma average forward current v r = 0 i fav 300 ma power dissipation p tot 500 mw parameter test condition symbol value unit thermal resistance junction to ambient air on pc board 50 mm x 50 mm x 1.6 mm r thja 300 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c
www.vishay.com 2 document number 85562 rev. 1.8, 20-aug-10 ls4150 vishay semiconductors for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol min. ty p. max. unit forward voltage i f = 1 ma v f 540 620 mv i f = 10 ma v f 660 740 mv i f = 50 ma v f 760 860 mv i f = 100 ma v f 820 920 mv i f = 200 ma v f 870 1000 mv reverse current v r = 50 v i r 100 na v r = 50 v, t j = 150 c i r 100 a diode capacitance v r = 0, f = 1 mhz, v hf = 50 mv c d 2.5 pf reverse recovery time i f = i r = 10 to 100 ma, i r = 0.1 x i r , r l = 100 t rr 4ns figure 1. reverse current vs. junction temperature figure 2. forward current vs. forward voltage 040 8 0 120 160 200 0.01 0.1 1 10 100 i- re v erse c u rrent ( a) r t j - j u nction temperat u re (c) 94 9100 scattering limit v r = 50 v 00.40. 8 1.2 1.6 0.1 1 10 100 1000 i - for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 2.0 94 9162 scattering limit t j = 25 c
ls4150 document number 85562 rev. 1.8, 20-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeter s (inches): quadromelf sod-80 96 12071 cathode identification 1.25 (0.049) min. 3.7 (0.146) 3.3 (0.130) 0.47 (0.019) max. 2.5 (0.09 8 ) max. 1.6 (0.063) 1.4 (0.055) 5 (0.197) ref. foot print recommendation: 2 (0.079) min. > r3 (r0.11 8 ) glass 1.7 (0.067) glass the gap b et w een pl u g and glass can b e either on cathode or anode side
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